PART |
Description |
Maker |
MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC MOTOROLA[Motorola, Inc] Motorola Semiconductor Motorola, Inc.
|
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State GE Solid State
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
MTP5N20 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
CMT02N60GN252 CMT02N60XN252 CMT02N6010 CMT02N60GN2 |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp. Champion Microelectronic Co... Champion Microelectroni...
|
MTH6N60 MTH6N55 |
Power Field Effect Transistor
|
New Jersey Semi-Conduct...
|
MTM20P10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC Motorola, Inc
|
UFT150-28 |
RF POWER FIELD-EFFECT TRANSISTOR
|
Advanced Semiconductor, Inc.
|
MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
D84DN2 D84DM2 |
FIELD EFFECT POWER TRANSISTOR
|
New Jersey Semi-Conduct...
|